Power Transistor BJT works in four regions of operation they are NPN-power-transistor-construction Operation of Power Transistor Where the emitter terminal is connected to highly doped n-type layer, below which a moderately doped p-layer of 1016 cm-3 concentration is present, and a lightly doped n- layer of 1014 cm-3 concentration, which is also named as collector drift region, where the collector drift region decides the break-over voltage of the device and at the bottom, it has an n+ layer which is highly doped n-type layer of 1019 cm-3 concentration, where the collector is etched away for user interface. The following construction shows a P-N-P type, which consists of three terminals emitter, base, and collector. It can be designed using P-N-P or an N-P-N transistor.
The Power Transistor BJT is a vertically oriented device having a large area of cross-sectional with alternate P and N-type layers are connected together. At the input of the circuit, the losses are less.The following are the characteristics of Insulated-gate Bipolar transistor (IGBTs), insulated-gate-bipolar-transistor-(IGBTs) They are commonly applied in power electronics devices like inverters, converters, and power supply. Insulated-gate Bipolar Transistor (IGBTs)Īs the name suggests an IGBT is a combination of FET and BJT transistor whose function is based on its gate, where the transistor can be turned on or off depending on the gate. The following are the characteristics of static induction transistor, static-induction-transistor The main advantage of the static induction transistor is that it has a higher voltage breakdown in comparison with FET- field-effect transistor. It is a device that has three terminals, with high power and frequency which is vertically oriented. It is also known as a voltage controller.The following are the characteristics of a MOSFET, That is if the channel width is wide, it works efficiently. MOSFET functionality depends on the width of the channel. MOSFET is a sub-classification of FET transistor, It is a three-terminal device containing source, base, and drain terminals. MOS-metal-oxide-semiconductor-field-effect-transistor-(MOSFETs)-FETs It has higher current carrying and high-power handling capability.
It has a larger size, so that maximum current can flow through it.It consists of three main parts Emitter (E), Base (B), and Collector (C), or a Source(S), drain (D), and gate(G). There are classified into two types based on their structure, BJT- bipolar junction transistor (transistors like Junction transistor, NPN transistor, PNP transistor) and FET- field-effect transistor ( transistors like junction function transistor and metal oxide transistor, N- channel MOSFET, P- channel MOSFET), and there functionality (like Small-signal transistor, Small switching transistor, Power transistor, High-frequency transistor, Phototransistor, Unijunction transistors). A transistor compromises of semiconductor materials like silicon or germanium or gallium – arsenide. The main function of a transistor is to amplify the weak signals and regulate them accordingly. The very first transistor invented was a point contact transistor. It is a basic building block of any digital components. A transistor is a semiconductor device, which was invented in the year 1947 at Bell Lab by William Shockley, John Bardeen, and Walter Houser Brattain.
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